Evaluation of multilevel memory capability of ReRAM using Ta2O5 insulator and different electrode materials



: Li Yuanlin, Katsumura Reon, Grönroos Mika, Tsurumaki-Fukuchi Atsushi, Arita Masashi, Andoh Hideyuki, Morie Takashi, Takahashi Yasuo

: Kazubiko Endo

: Silicon Nanoelectronics Workshop

: 2017

: 2017 Silicon Nanoelectronics Workshop (SNW)

: 978-1-5386-4638-0

: 978-4-8634-8647-8

DOI: https://doi.org/10.23919/SNW.2017.8242309


ReRAM (Resistive Random Access Memory) has been drawing attention for
its neural network applications with low-power and high-speed operation.
The multilevel data storage capability is inherently needed to use the
ReRAM as synaptic devices. In this study, two ReRAM devices with
different electrode materials in which the operation mechanisms are
thought to be different was fabricated and tested. It was clarified that
the multilevel resistance characteristics were achieved in both
devices.



Last updated on 2024-26-11 at 21:25