A4 Refereed article in a conference publication
Evaluation of multilevel memory capability of ReRAM using Ta2O5 insulator and different electrode materials
Authors: Li Yuanlin, Katsumura Reon, Grönroos Mika, Tsurumaki-Fukuchi Atsushi, Arita Masashi, Andoh Hideyuki, Morie Takashi, Takahashi Yasuo
Editors: Kazubiko Endo
Conference name: Silicon Nanoelectronics Workshop
Publication year: 2017
Book title : 2017 Silicon Nanoelectronics Workshop (SNW)
ISBN: 978-1-5386-4638-0
eISBN: 978-4-8634-8647-8
DOI: https://doi.org/10.23919/SNW.2017.8242309
ReRAM (Resistive Random Access Memory) has been drawing attention for
its neural network applications with low-power and high-speed operation.
The multilevel data storage capability is inherently needed to use the
ReRAM as synaptic devices. In this study, two ReRAM devices with
different electrode materials in which the operation mechanisms are
thought to be different was fabricated and tested. It was clarified that
the multilevel resistance characteristics were achieved in both
devices.
