Low threshold current 1.32 um GaInNAs / GaAs single quantum well lasers grown by molecular beam epitaxy
: W. Li, T. Jouhti, C.S. Peng, J. Konttinen, P. Laukkanen, E.-M. Pavelescu, M. Dumitrescu, M. Pessa
: 2001
: Applied Physics Letters
: 79
: 3386
Low threshold current 1.32 um GaInNAs / GaAs single quantum well lasers grown by molecular beam epitaxy
: W. Li, T. Jouhti, C.S. Peng, J. Konttinen, P. Laukkanen, E.-M. Pavelescu, M. Dumitrescu, M. Pessa
: 2001
: Applied Physics Letters
: 79
: 3386