Structural, electrical, and optical properties of defects in Si-doped GaN grown by molecular-beam epitaxy on hydride vapor phase epitaxy GaN on sapphire

: P. Laukkanen, S. Lehkonen, P. Uusimaa, M. Pessa, J. Oila, S. Hautakangas, K. Saarinen, J. Likonen, and J. Keränen

: 2002

: Journal of Applied Physics

: 92

: 786