A1 Refereed original research article in a scientific journal

Structural, electrical, and optical properties of defects in Si-doped GaN grown by molecular-beam epitaxy on hydride vapor phase epitaxy GaN on sapphire




AuthorsP. Laukkanen, S. Lehkonen, P. Uusimaa, M. Pessa, J. Oila, S. Hautakangas, K. Saarinen, J. Likonen, and J. Keränen

Publication year2002

JournalJournal of Applied Physics

Volume92

First page 786




Last updated on 2024-26-11 at 15:30