Post-annealing of InGaAs / GaAs and InGaAsN / GaAs triple quantum-well structures with a modified proximity GaAs cap: A dramatic effect on the optical and structural properties

: J. Pakarinen, C.S. Peng, J. Puustinen, P. Laukkanen, A. Tukiainen, V.-M. Korpijärvi, M. Pessa

: 2008

: Applied Physics Letters

: 92

: 232105