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Influence of the ytterbium doping technique on the luminescent properties of ZnSe single crystals




TekijätIvan Radevici, Konstantin Sushkevich, Hannu Huhtinen, Dmitrii Nedeoglo, Petriina Paturi

KustantajaElsevier

Julkaisuvuosi2015

JournalJournal of Luminescence

Tietokannassa oleva lehden nimiJournal of Luminescence

Vuosikerta158

Aloitussivu236

Lopetussivu242

Sivujen määrä7

ISSN0022-2313

DOIhttps://doi.org/10.1016/j.jlumin.2014.10.002

Verkko-osoitehttp://api.elsevier.com/content/abstract/scopus_id:84908530300


Tiivistelmä

Luminescent properties of the ytterbium doped zinc selenide crystals with 0.00-8.00 at % concentrations of the Yb impurity within the temperature interval from 6 K to 300 K were studied. Ytterbium doping was performed within three technological processes: during the growth by chemical vapor transport method and by thermal diffusion from the Bi+Yb or Zn+Yb melt. The influence of ytterbium impurity concentration on spectral position and intensity of the various photoluminescent bands in ZnSe emission spectra in visible and infrared range is analyzed. A tendency of ytterbium ions to form associates with background defects was demonstrated. A strong dependence between ytterbium influence on the zinc selenide emission spectra and concentration of selenium vacancies was shown.




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