A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä
Fabrication of a thin silicon detector with excellent thickness uniformity
Tekijät: Valtonen E, Eronen T, Nenonen S, Andersson H, Miikkulainen K, Eranen S, Ronkainen H, Makinen J, Husu H, Lassila A, Punkkinen R, Hirvonen M
Kustantaja: Elsevier Science BV
Julkaisuvuosi: 2016
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Tietokannassa oleva lehden nimi: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
Lehden akronyymi: Nucl Instrum Meth A
Vuosikerta: 810
Aloitussivu: 27
Lopetussivu: 31
Sivujen määrä: 5
ISSN: 0168-9002
DOI: https://doi.org/10.1016/j.nima.2015.11.124
We have fabricated and tested a thin silicon detector with the specific goal of having a very good thickness uniformity. SOI technology was used in the detector fabrication. The detector was designed to be used as a Delta E detector in a silicon telescope for measuring solar energetic particles in space. The detector thickness was specified to be 20 mu m with an rms thickness uniformity of +/- 0.5%. The active area consists of three separate elements, a round centre area and two surrounding annular segments. A new method was developed for measuring the thickness uniformity based on a modified Fizeau interferometer. The thickness uniformity specification was well met with the measured rms thickness variation of 43 nm. The detector was electrically characterized by measuring the I-V and C-V curves and the performance was verified using a Am-241 alpha source. (C) 2015 Elsevier B.V. All rights reserved.
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