A2 Vertaisarvioitu katsausartikkeli tieteellisessä lehdessä
Detection principles of biological and chemical FET sensors
Tekijät: Kaisti Matti
Kustantaja: ELSEVIER ADVANCED TECHNOLOGY
Julkaisuvuosi: 2017
Journal: Biosensors and Bioelectronics
Tietokannassa oleva lehden nimi: BIOSENSORS & BIOELECTRONICS
Lehden akronyymi: BIOSENS BIOELECTRON
Vuosikerta: 98
Aloitussivu: 437
Lopetussivu: 448
Sivujen määrä: 12
ISSN: 0956-5663
eISSN: 0956-5663
DOI: https://doi.org/10.1016/j.bios.2017.07.010
Rinnakkaistallenteen osoite: https://research.utu.fi/converis/portal/detail/Publication/26331288
Tiivistelmä
The seminal importance of detecting ions and molecules for point-of-care tests has driven the search for more sensitive, specific, and robust sensors. Electronic detection holds promise for future miniaturized in-situ applications and can be integrated into existing electronic manufacturing processes and technology. The resulting small devices will be inherently well suited for multiplexed and parallel detection. In this review, different field-effect transistor (FET) structures and detection principles are discussed, including label-free and indirect detection mechanisms. The fundamental detection principle governing every potentiometric sensor is introduced, and different state-of-the-art FET sensor structures are reviewed. This is followed by an analysis of electrolyte interfaces and their influence on sensor operation. Finally, the fundamentals of different detection mechanisms are reviewed and some detection schemes are discussed. In the conclusion, current commercial efforts are briefly considered.
The seminal importance of detecting ions and molecules for point-of-care tests has driven the search for more sensitive, specific, and robust sensors. Electronic detection holds promise for future miniaturized in-situ applications and can be integrated into existing electronic manufacturing processes and technology. The resulting small devices will be inherently well suited for multiplexed and parallel detection. In this review, different field-effect transistor (FET) structures and detection principles are discussed, including label-free and indirect detection mechanisms. The fundamental detection principle governing every potentiometric sensor is introduced, and different state-of-the-art FET sensor structures are reviewed. This is followed by an analysis of electrolyte interfaces and their influence on sensor operation. Finally, the fundamentals of different detection mechanisms are reviewed and some detection schemes are discussed. In the conclusion, current commercial efforts are briefly considered.
Ladattava julkaisu This is an electronic reprint of the original article. |  |
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