Increased grain boundary critical current density J(c)(gb) by Pr-doping in pulsed laser-deposited Y1-xPrxBCO thin films

: Irjala M, Huhtinen H, Awana VPS, Falter M, Paturi P

Publisher: AMER INST PHYSICS

: 2011

: Journal of Applied Physics

: JOURNAL OF APPLIED PHYSICS

: J APPL PHYS

: ARTN 113905

: 11

: 110

: 11

: 1139051

: 8

: -1139042

: 0021-8979

DOI: https://doi.org/10.1063/1.3664773

A comparative study has been performed on Pr-doped Y1-xPrxBCO (x = 0 - 0.20) thin films deposited by pulsed laser deposition on MgO and buffered NiW substrates to study the effect of Pr-doping on the grain boundary critical current density (J(c)(gb)). Our earlier work on bulk materials and SrTiO3 substrates indicated that, whereas Pr increases J(c) in bulk samples, it does not increase Jc in film samples without grain boundaries. In this work, we present increased J(c) in low concentrations of Pr3+-doping (x < 0.04) at temperatures above 60K in film samples on MgO substrates and at all temperatures and fields in film samples on buffered NiW substrates. Results indicate that Pr segregates into grain boundary regions, improving the local hole concentration and carrier density, hence, increasing J(c)(gb). (C) 2011 American Institute of Physics. [doi.10.1063/1.3664773]