A1 Refereed original research article in a scientific journal
Increased grain boundary critical current density J(c)(gb) by Pr-doping in pulsed laser-deposited Y1-xPrxBCO thin films
Authors: Irjala M, Huhtinen H, Awana VPS, Falter M, Paturi P
Publisher: AMER INST PHYSICS
Publication year: 2011
Journal: Journal of Applied Physics
Journal name in source: JOURNAL OF APPLIED PHYSICS
Journal acronym: J APPL PHYS
Article number: ARTN 113905
Number in series: 11
Volume: 110
Issue: 11
First page : 1139051
Last page: 8
Number of pages: -1139042
ISSN: 0021-8979
DOI: https://doi.org/10.1063/1.3664773(external)
Abstract
A comparative study has been performed on Pr-doped Y1-xPrxBCO (x = 0 - 0.20) thin films deposited by pulsed laser deposition on MgO and buffered NiW substrates to study the effect of Pr-doping on the grain boundary critical current density (J(c)(gb)). Our earlier work on bulk materials and SrTiO3 substrates indicated that, whereas Pr increases J(c) in bulk samples, it does not increase Jc in film samples without grain boundaries. In this work, we present increased J(c) in low concentrations of Pr3+-doping (x < 0.04) at temperatures above 60K in film samples on MgO substrates and at all temperatures and fields in film samples on buffered NiW substrates. Results indicate that Pr segregates into grain boundary regions, improving the local hole concentration and carrier density, hence, increasing J(c)(gb). (C) 2011 American Institute of Physics. [doi.10.1063/1.3664773]
A comparative study has been performed on Pr-doped Y1-xPrxBCO (x = 0 - 0.20) thin films deposited by pulsed laser deposition on MgO and buffered NiW substrates to study the effect of Pr-doping on the grain boundary critical current density (J(c)(gb)). Our earlier work on bulk materials and SrTiO3 substrates indicated that, whereas Pr increases J(c) in bulk samples, it does not increase Jc in film samples without grain boundaries. In this work, we present increased J(c) in low concentrations of Pr3+-doping (x < 0.04) at temperatures above 60K in film samples on MgO substrates and at all temperatures and fields in film samples on buffered NiW substrates. Results indicate that Pr segregates into grain boundary regions, improving the local hole concentration and carrier density, hence, increasing J(c)(gb). (C) 2011 American Institute of Physics. [doi.10.1063/1.3664773]
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