Effects of (NH4)2S and NH4OH surface treatments prior to SiO2 capping on 1.3: GaInAsN/GaAs quantum well structures

: Polojärvi V, Salmi J, Schramm A, Tukiainen A, Guina M, Pakarinen J, Arola E, Lång J, Väyrynen I J, Laukkanen P

: 2010

: Applied Physics Letters

: 111109

: 11

: 97

: 11

: 3

: 0003-6951