A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä
Oxidation of GaSb(100) and its control studied by scanning tunneling microscopy and spectroscopy
Tekijät: J. Mäkelä, M. Tuominen, M. Yasir, M. Kuzmin, J. Dahl, M. P. J. Punkkinen, P. Laukkanen, K. Kokko, R. M. Wallace
Kustantaja: AIP Publishing
Julkaisuvuosi: 2015
Journal: Applied Physics Letters
Lehden akronyymi: APL
Artikkelin numero: 061601
Vuosikerta: 107
Numero: 6
Sivujen määrä: 5
ISSN: 0003-6951
eISSN: 1077-3118
DOI: https://doi.org/10.1063/1.4928544
Atomic-scale knowledge and control of oxidation of GaSb(100), which is a potential interface for energy-efficient transistors, are still incomplete, largely due to an amorphous structure of GaSb(100) oxides. We elucidate these issues with scanning-tunneling microscopy and spectroscopy. The unveiled oxidation-induced building blocks cause defect states above Fermi level around the conduction-band edge. By interconnecting the results to previous photoemission findings, we suggest that the oxidation starts with substituting second-layer Sb sites by oxygen. Adding small amount of indium on GaSb(100), resulting in a (4 × 2)-In reconstruction, before oxidation produces a previously unreported, crystalline oxidized layer of (1 × 3)-O free of gap states.
Ladattava julkaisu This is an electronic reprint of the original article. |  | |
Ladattava julkaisu This is an electronic reprint of the original article. | | |
Ladattava julkaisu This is an electronic reprint of the original article. | ||
Ladattava julkaisu This is an electronic reprint of the original article. | ||
Ladattava julkaisu This is an electronic reprint of the original article. |
