A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä
Regenerative Electroless Etching of Silicon
Tekijät: Kurt W. Kolasinski, Nathan J. Gimbar, Haibo Yu, Mark Aindow, Ermei Mäkila, Jarno Salonen
Kustantaja: WILEY-V C H VERLAG GMBH
Julkaisuvuosi: 2017
Journal: Angewandte Chemie International Edition
Tietokannassa oleva lehden nimi: ANGEWANDTE CHEMIE-INTERNATIONAL EDITION
Lehden akronyymi: ANGEW CHEM INT EDIT
Vuosikerta: 56
Numero: 2
Aloitussivu: 624
Lopetussivu: 627
Sivujen määrä: 4
ISSN: 1433-7851
DOI: https://doi.org/10.1002/anie.201610162
Tiivistelmä
Regenerative electroless etching (ReEtching), described herein for the first time, is a method of producing nanostructured semiconductors in which an oxidant (Ox(1)) is used as a catalytic agent to facilitate the reaction between a semiconductor and a second oxidant (Ox(2)) that would be unreactive in the primary reaction. Ox(2) is used to regenerate Ox(1), which is capable of initiating etching by injecting holes into the semiconductor valence band. Therefore, the extent of reaction is controlled by the amount of Ox(2) added, and the rate of reaction is controlled by the injection rate of Ox(2). This general strategy is demonstrated specifically for the production of highly luminescent, nanocrystalline porous Si from the reaction of V2O5 in HF(aq) as Ox(1) and H2O2(aq) as Ox(2) with Si powder and wafers.
Regenerative electroless etching (ReEtching), described herein for the first time, is a method of producing nanostructured semiconductors in which an oxidant (Ox(1)) is used as a catalytic agent to facilitate the reaction between a semiconductor and a second oxidant (Ox(2)) that would be unreactive in the primary reaction. Ox(2) is used to regenerate Ox(1), which is capable of initiating etching by injecting holes into the semiconductor valence band. Therefore, the extent of reaction is controlled by the amount of Ox(2) added, and the rate of reaction is controlled by the injection rate of Ox(2). This general strategy is demonstrated specifically for the production of highly luminescent, nanocrystalline porous Si from the reaction of V2O5 in HF(aq) as Ox(1) and H2O2(aq) as Ox(2) with Si powder and wafers.
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