A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä
Dynamic Polarization and Relaxation of 75As Nuclei in Silicon at High Magnetic Field and Low Temperature
Tekijät: J. Järvinen, J. Ahokas, S. Sheludyakov, O. Vainio, D. Zvezdov, L. Lehtonen, L. Vlasenko, S. Vasiliev
Kustantaja: SPRINGER WIEN
Julkaisuvuosi: 2017
Journal: Applied Magnetic Resonance
Vuosikerta: 48
Numero: 5
Aloitussivu: 473
Lopetussivu: 483
Sivujen määrä: 11
ISSN: 0937-9347
eISSN: 1613-7507
DOI: https://doi.org/10.1007/s00723-017-0875-z
Rinnakkaistallenteen osoite: https://research.utu.fi/converis/portal/detail/Publication/19070765
We present the results of experiments on dynamic nuclear polar-
ization and relaxation of 75 As in silicon crystals. Experiments are performed
in strong magnetic fields of 4.6 T and temperatures below 1 K. At these con-
ditions donor electron spins are fully polarized, and the allowed and forbidden
ESR transitions are well resolved. We demonstrate effective nuclear polar-
ization of 75 As nuclei via the Overhauser effect on the time scale of several
hundred seconds. Excitation of the forbidden transitions leads to a polariza-
tion through the solid effect. The relaxation rate of donor nuclei has strong
temperature dependence characteristic of Orbach process.
Ladattava julkaisu This is an electronic reprint of the original article. |  |
