Dynamic Polarization and Relaxation of 75As Nuclei in Silicon at High Magnetic Field and Low Temperature




J. Järvinen, J. Ahokas, S. Sheludyakov, O. Vainio, D. Zvezdov, L. Lehtonen, L. Vlasenko, S. Vasiliev

PublisherSPRINGER WIEN

2017

Applied Magnetic Resonance

48

5

473

483

11

0937-9347

1613-7507

DOIhttps://doi.org/10.1007/s00723-017-0875-z

https://research.utu.fi/converis/portal/detail/Publication/19070765



We present the results of experiments on dynamic nuclear polar-
ization and relaxation of 75 As in silicon crystals. Experiments are performed
in strong magnetic fields of 4.6 T and temperatures below 1 K. At these con-
ditions donor electron spins are fully polarized, and the allowed and forbidden
ESR transitions are well resolved. We demonstrate effective nuclear polar-
ization of 75 As nuclei via the Overhauser effect on the time scale of several
hundred seconds. Excitation of the forbidden transitions leads to a polariza-
tion through the solid effect. The relaxation rate of donor nuclei has strong
temperature dependence characteristic of Orbach process.


Last updated on 2024-26-11 at 17:59