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Studies of accumulation rate of H atoms in solid H2 films exposed to 0.1 and 5.7 keV electrons




TekijätSheludiakov S, Wetzel CK, Lee DM, Khmelenko VV, Järvinen J, Ahokas J, Vasiliev S

KustantajaAMER PHYSICAL SOC

Julkaisuvuosi2023

JournalPhysical Review B

Tietokannassa oleva lehden nimiPHYSICAL REVIEW B

Lehden akronyymiPHYS REV B

Artikkelin numero 134110

Vuosikerta107

Numero13

Sivujen määrä6

ISSN2469-9950

DOIhttps://doi.org/10.1103/PhysRevB.107.134110

Verkko-osoitehttps://doi.org/10.1103/PhysRevB.107.134110

Rinnakkaistallenteen osoitehttps://research.utu.fi/converis/portal/detail/Publication/179737522


Tiivistelmä

In this work, we report on electron spin resonance studies of H atoms stabilized in solid H2 films at temperature 0.1 and 0.7 K and in a magnetic field of 4.6 T. We produced H atoms by two different techniques: bombarding H2 films by 0.1 keV electrons generated during an rf discharge run in the sample cell or exposing H2 films to a flux of 5.7 keV electrons released during tritium decay. We observed a faster H atom accumulation in the films made of H2 gas with a small initial ortho-H2 content (0.2-3%) as compared with those made from the gas with a higher initial ortho-H2 admixture. The accumulation rate difference was about 70% for the samples exposed to high energy electrons and about an order of magnitude for the samples bombarded by low-energy electrons. We propose possible explanations for the observed behavior.


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