A1 Refereed original research article in a scientific journal
Giant magnetoresistance response in Sr2FeMoO6 based organic spin valves
Authors: Angervo Ilari, Saloaro Minnamari, Palonen Heikki, Huhtinen Hannu, Paturi Petriina, Mäkelä Tapio, Majumdar Sayani
Publisher: ELSEVIER
Publication year: 2022
Journal: Applied Surface Science
Journal name in source: APPLIED SURFACE SCIENCE
Journal acronym: APPL SURF SCI
Article number: 152854
Volume: 589
Number of pages: 6
ISSN: 0169-4332
eISSN: 1873-5584
DOI: https://doi.org/10.1016/j.apsusc.2022.152854
Self-archived copy’s web address: https://research.utu.fi/converis/portal/detail/Publication/175158295
We report the fabrication of the first Sr2FeMoO6 based organic spin valve device using Tris(8-hydroxyquinolinato) aluminum (Alq(3)) as a spin transport layer. The characterization of the device confirms hysteretic magnetoresistance with approximately 20%-30% switching between high and low resistance states at low temperatures. The results demonstrate that organic semiconductors can form a suitable interface with double perovskite, half metallic Sr2FeMoO6, for efficient low temperature operation and have a potential to improve the room temperature performance significantly in tunneling devices where decay in spin diffusion length of organic layer does not affect the transport.
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