Pekka Laukkanen
peklau@utu.fi ORCID-tunniste: https://orcid.org/0000-0003-4220-985X |
pintatiede; puolijohde; pinnan passivointi; ohutkalvot
materials physics, semiconductor research, surfaces and interfaces
I started scientific activities as a research assistant in 1997 at Optoelectronics Research Centre (ORC) in Prof. Markus Pessa’s group, Tampere University of Technology (Finland) where I learned to grow and measure semiconductor device materials. In 2001, I moved to University of Turku (Finland) where I have focused on surface science of different semiconductors (e.g. Si, Ge, GaAs, InP, GaN, SiC) at Materials Physics group, led by Prof. Juhani Väyrynen and then by Prof. Kalevi Kokko. In December 2023, I started as a head of this group. I have a passion to connect two research areas: semiconductor technology and surface science. I see a lot of synergy and potential in increasing connection between these two disciplines which have been quite separate previously. I want to to contribute in sustainable and efficient semiconductor industry via surface-science expertise of our group. I am an experienced supervisor and mentor, with experience of guiding colleagues and students in their academic pursuits. This also extends to advising students on career opportunities outside of academia, for example, my PhD students have founded two start-up companies (Comptek Solutions 2017 and SisuSemi 2024).
Our materials physics group has investigated surface properties: chemical, electronic and structural ones of traditional semiconductor crystals including silicon (Si), germanium (Ge), and III-V compound semiconductors (e.g. GaAs, GaN, InAs, InP) by means of electron diffraction (LEED), scanning tunneling microscopy and spectroscopy (STM/STS), and photoelectron spectroscopy including synchrotron-radiation spectroscopy. One goal has been to contribute a connection between two fields: surface science and the semiconductor technology. More recently we have focused on the question how to decrease surface-related electrical and optical losses in semiconductor devices like capacitors, sensors, solar cells, and transistors. We aim to understand reasons behind formation of defect levels in device surfaces, and to find new methods to decrease the amount of defect levels. In order to measure opto-electrical properties of device interfaces in particular oxide-semiconductor and metal-semiconductor interfaces, we develop own skills to manufacture semiconductor devices in clean rooms.
Recently I have teched the following courses at the University of Turku:
- Phases and properties of materials (Aineen olomuodot ja ominaisuudet)
- Electrical properties of solids
- Semiconductors.
- Lithography-free oxide patterns as templates for self-catalyzed growth of highly uniform GaAs nanowires on Si(111) (2015)
- Nanotechnology
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä ) - Manufacturing Of Foreign Oxide On Semiconductor (2015) P. Laukkanen, M. Kuzmin, M. Yasir, M. Tuominen, J. Dahl, V. Tuominen, J. Mäkelä, M. Punkkinen, K. Kokko
(O2 Muu julkaisu ) - Observation of unusual metal-semiconductor interaction and metal-induced gap states at an oxide-semiconductor interface: The case of epitaxial BaO/Ge(100) junction (2015)
- Physical Review B
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä ) - Oxidation of GaSb(100) and its control studied by scanning tunneling microscopy and spectroscopy (2015)
- Applied Physics Letters
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä ) - Oxidation of the GaAs semiconductor at the Al2O3/GaAs junction (2015)
- Physical Chemistry Chemical Physics
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä ) - Oxidized crystalline (3 x 1)-O surface phases of InAs and InSb studied by high-resolution photoelectron spectroscopy (2015)
- Applied Physics Letters
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä ) - Pulsed laser deposition of organic semiconductor Rubrene thin films (2015)
- Proceedings of SPIE : the International Society for Optical Engineering
(A4 Vertaisarvioitu artikkeli konferenssijulkaisussa) - Segregation, precipitation, and α-α' phase separation in Fe-Cr alloys (2015)
- Physical Review B
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä ) - Synthesis and properties of crystalline thin film of antimony trioxide on the Si(1 0 0) substrate (2015)
- Applied Surface Science
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä ) - Thermodynamics of the pseudobinary GaAs1-xBix (0≤x≤1) alloys studied by different exchange-correlation functionals, special quasi-random structures and Monte Carlo simulations (2015)
- Computational Condensed Matter
(A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä )



