Alejandro Schulman
Postdoctoral Researcher
alejandro.schulman@utu.fi ORCID identifier: https://orcid.org/0000-0002-8053-2626 |
Publications
- Area-Dependent Resistive Switching and Interfacial Dynamics in GCMO-Based Memristors (2025)
- ACS applied electronic materials
(A1 Refereed original research article in a scientific journal) - Bioplausible Synaptic Behavior of Al/Gd0.3Ca0.7MnO3/Au Memristive Devices for Unsupervised Spiking Neural Networks (2024)
- ACS applied electronic materials
(A1 Refereed original research article in a scientific journal) - Importance of growth method and substrate-induced crystalline quality in Al/Gd0.2Ca0.8MnO3/Au memristor devices (2024)
- Journal of Physics D: Applied Physics
(A1 Refereed original research article in a scientific journal) - Structurally simplified GCMO crossbar design for artificial synaptic networks (2024)
- Applied Physics Letters
(A1 Refereed original research article in a scientific journal) - The effect of substrate-induced defects on structural and resistive switching properties in Gd0.2Ca0.8MnO3 thin films (2024)
- AIP Advances
(A1 Refereed original research article in a scientific journal) - Bipolar Resistive Switching in 2D MoSe2 Grown by Atmospheric Pressure Chemical Vapor Deposition (2023)
- ACS Applied Materials and Interfaces
(A1 Refereed original research article in a scientific journal) - Compact Modeling and SPICE Simulation of GCMO-Based Resistive Switching Devices (2022)
- IEEE Transactions on Nanotechnology
(A1 Refereed original research article in a scientific journal) - Increased Curie temperature and magnetoresistive response by modifying Fe/Mo ratio in Sr2FeMoO6 thin films (2022)
- Journal of Magnetism and Magnetic Materials
(A1 Refereed original research article in a scientific journal) - Manipulating magnetic and magnetoresistive properties by oxygen vacancy complexes in GCMO thin films (2022)
- Journal of Physics: Condensed Matter
(A1 Refereed original research article in a scientific journal) - Electron Doping Effect in the Resistive Switching Properties of Al/Gd 1- x Ca x MnO 3/Au Memristor Devices (2021)
- ACS Applied Materials and Interfaces
(A1 Refereed original research article in a scientific journal) - Metastable ferromagnetic flux closure-type domains in strain relaxed Gd0.1Ca0.9MnO3 thin films (2021)
- Journal of Physics: Condensed Matter
(A1 Refereed original research article in a scientific journal) - Tuned AFM-FM coupling by the formation of vacancy complex in Gd0.6Ca0.4MnO3 thin film lattice (2021)
- Journal of Physics: Condensed Matter
(A1 Refereed original research article in a scientific journal) - Appearance of glassy ferromagnetic behavior in Gd1-xCaxMnO3 (0 <= x <= 1) thin films: A revised phase diagram (2020)
- Journal of Magnetism and Magnetic Materials
(A1 Refereed original research article in a scientific journal) - Transport properties of resistive switching in Ag/Pr0.6Ca0.4MnO3/Al thin film structures (2019)
- Journal of Alloys and Compounds
(A1 Refereed original research article in a scientific journal)