A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä
Growth optimization of CeCoIn5 thin films via pulsed laser deposition
Tekijät: Rivasto Elmeri, Kim Jihyun, Tien Le Minh, Kang Ji-Hoon, Park Sungmin, Choi Woo Seok, Kang Won Nam, Park Tuson
Kustantaja: KOREA INST APPLIED SUPERCONDUCTIVITY & CRYOGENICS
Julkaisuvuosi: 2021
Journal: Progress in Superconductivity and Cryogenics
Tietokannassa oleva lehden nimi: PROGRESS IN SUPERCONDUCTIVITY AND CRYOGENICS
Lehden akronyymi: PROG SUPERCOND CRYOG
Vuosikerta: 23
Numero: 3
Aloitussivu: 41
Lopetussivu: 44
Sivujen määrä: 4
ISSN: 1229-3008
DOI: https://doi.org/10.9714/psac.2021.23.3.041
Tiivistelmä
We developed an optimization process of the pulsed laser deposition method to grow epitaxial CeCoIns thin films on MgF2 substrates. The effects of different deposition parameters on film growth were extensively studied by analyzing the measured X-ray diffraction patterns. All the deposited films contained small amounts of CeIn3 impurity phase and misoriented CeCoIn5, for which the c-axis of the unit cell is perpendicular to the normal vector of the substrate surface. The deposition temperature, target composition, laser energy density, and repetition rate were found effective in the formation of (001)-oriented CeCoIns as well as the undesired phases such as CeIn3, misoriented CeCoIn(5)( )along the (112) and (h00). Our results provide a set of deposition parameters that produce high-quality epitaxial CeCoIn5 thin films with sufficiently low amounts of impurity phases and can serve as a reference for future studies to optimize the deposition process further.
We developed an optimization process of the pulsed laser deposition method to grow epitaxial CeCoIns thin films on MgF2 substrates. The effects of different deposition parameters on film growth were extensively studied by analyzing the measured X-ray diffraction patterns. All the deposited films contained small amounts of CeIn3 impurity phase and misoriented CeCoIn5, for which the c-axis of the unit cell is perpendicular to the normal vector of the substrate surface. The deposition temperature, target composition, laser energy density, and repetition rate were found effective in the formation of (001)-oriented CeCoIns as well as the undesired phases such as CeIn3, misoriented CeCoIn(5)( )along the (112) and (h00). Our results provide a set of deposition parameters that produce high-quality epitaxial CeCoIn5 thin films with sufficiently low amounts of impurity phases and can serve as a reference for future studies to optimize the deposition process further.
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