A1 Journal article – refereed

Atomic and electronic structures of Si/Ge(100) interfaces studied by high-resolution photoelectron spectroscopy and scanning tunneling microscopy

List of Authors: Kuzmin Mikhail, Lehtiö Juha-Pekka, Jahanshah Rad Zahra, Sorokina SV, Punkkinen Marko PJ, Laukkanen Pekka, Kokko Kalevi


Publication year: 2021

Journal: Physical Review B

Journal name in source: PHYSICAL REVIEW B

Journal acronym: PHYS REV B

Volume number: 103

Issue number: 19

Number of pages: 11

ISSN: 2469-9950

DOI: http://dx.doi.org/10.1103/PhysRevB.103.195312

The close similarity of silicon and germanium, isoelectronic group-IV elements, makes the integration of Ge layers on Si substrates suitable for technology development, but the atomic and electronic structures of Si1-xGex surfaces are still an open issue, in particular, for the alloy systems where Si is deposited on the Ge substrate. In this study, utilizing low-energy electron diffraction, scanning tunneling microscopy, and photoelectron spectroscopy using synchrotron radiation, we demonstrate that the formation mechanisms of the Si-on-Ge structures are controlled by two interface phenomena, namely Si indiffusion and Ge segregation on top of this surface. Employing these phenomena and controlling the Si quantity, one can synthesize the well-defined crystalline Ge-(2 x 1)/Si1-xGex/Ge(100) stacks where the number of Si atoms at the host Ge lattice sites can be tuned. Using the obtained data on the atomic and electronic structures of such systems, we also propose a method for interface engineering of Ge/Si/Ge stacks with tailored properties as promising templates for growing the device junctions.

Downloadable publication

This is an electronic reprint of the original article.
This reprint may differ from the original in pagination and typographic detail. Please cite the original version.

Last updated on 2021-24-06 at 08:47