Multijunction Photovoltaic (MJPV) cell technology has been promising in the assurance of high-efficiency solar cells. The growing interest of researchers towards the development of this domain reflects the potential in the promises provided by this technology. The possibility of MJPV cells was enhanced with the introduction of Back Surface Field (BSF) in the cell. In this paper, we have presented a detailed comparative study of effects of narrow bandgap (less than 1.1 eV), medium bandgap (1.2 eV to 2 eV) and wide bandgap (higher than 2 eV) semiconductor compounds on SnOX/CdTe/CdS thin-film solar cell. The effects on Quantum Efficiency(QE), Fill Factor (FF), Short circuit current density and open-circuit voltage have been thoroughly studied. After the analysis, it was found that CIGSe as BSF leads to the highest Fill Factor of 75.34% and the average quantum efficiency of 80.5%. The paper also presents the optimized model of the solar cell with different BSF materials for future studies and fabrications.