Thin films of Y1−xGdxBa 2Cu3O7−δ (x = 0, 1/3, 1/2, 2/3, 1), with and without BaZrO3 (BZO) artificial pinning centers (APCs), were deposited by pulsed laser deposition (PLD) under growth parameters identical to those used for YBa2Cu3O7−δ. The effects of partial Gd substitution on the critical current density Jc were systematically investigated and the results were found to differ between APC-free and BZO-doped films. Partial substitution of Y by Gd significantly enhanced Jc, particularly in films containing BZO nanorods. At 10 K, the x = 2/3 film with APC showed Jc enhancements up to 45% over the x = 0 film across a wide magnetic field and temperature range. These findings strongly support Gd doping in YBCO as a highly promising route for future applications requiring maximized magnetic-field-dependent critical current densities.