Structural characterization and strain relaxation in porous GaN layers



: Mynbaeva M, Titkov A, Kryganovskii A, Ratnikov V, Mynbaev K, Huhtinen H, Laiho R, Dmitriev V

Publisher: AMER INST PHYSICS

: 2000

 Applied Physics Letters

: APPLIED PHYSICS LETTERS

: APPL PHYS LETT

: 76

: 9

: 1113

: 1115

: 3

: 0003-6951

DOI: https://doi.org/10.1063/1.125955


Surface and subsurface structures of porous GaN prepared by anodizing epitaxial GaN layers grown on SiC substrates are investigated by atomic-force microscopy. Comparison of the images of the porous GaN surfaces with those taken on planes cleft perpendicular to the surface shows that the pores are formed along the boundaries of columnar structures of the original GaN films. X-ray investigations show that the porous GaN has less residual stresses than the initial GaN epitaxial layers. Use of porous GaN as a buffer layer for growth of low-stress GaN is proposed. (C) 2000 American Institute of Physics. [S0003-6951(00)01809-X].



Last updated on 13/10/2025 02:13:22 PM