A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä
Hall effect and pinning regimes in YBa2Cu3O6+x thin films doped with BaZrO3 nanoparticles
Tekijät: Safonchik M, Traito K, Tuominen S, Paturi P, Huhtinen H, Laiho R
Kustantaja: ELSEVIER SCIENCE BV
Julkaisuvuosi: 2009
Lehti:: Physica C: Superconductivity and its Applications
Tietokannassa oleva lehden nimi: PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS
Lehden akronyymi: PHYSICA C
Vuosikerta: 469
Numero: 22
Aloitussivu: 1983
Lopetussivu: 1986
Sivujen määrä: 4
ISSN: 0921-4534
DOI: https://doi.org/10.1016/j.physc.2009.08.001
Tiivistelmä
Hall effect and flux pinning in YBa2Cu3O6+x (YBCO) thin films doped with BaZrO3 (BZO) nanoparticles is investigated. The results show that sign reversal of the Hall coefficient from positive hole-like to negative electron-like occurs in vortex-liquid regime of undoped and BZO-doped YBCO films. With increasing BZO concentration the amplitude of the negative Hall effect is suppressed while the temperature position of the anomalous Hall effect does not depend significantly on doping level. In addition, it is shown that Hall conductivity increases non-monotonically with increasing BZO doping. These results support a model where BZO at low doping concentration induces point pinning centres turning to strong columnar pinning defects in films doped with 4% BZO. (c) 2009 Elsevier B.V. All rights reserved.
Hall effect and flux pinning in YBa2Cu3O6+x (YBCO) thin films doped with BaZrO3 (BZO) nanoparticles is investigated. The results show that sign reversal of the Hall coefficient from positive hole-like to negative electron-like occurs in vortex-liquid regime of undoped and BZO-doped YBCO films. With increasing BZO concentration the amplitude of the negative Hall effect is suppressed while the temperature position of the anomalous Hall effect does not depend significantly on doping level. In addition, it is shown that Hall conductivity increases non-monotonically with increasing BZO doping. These results support a model where BZO at low doping concentration induces point pinning centres turning to strong columnar pinning defects in films doped with 4% BZO. (c) 2009 Elsevier B.V. All rights reserved.
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