This article describes the implementation of a solid-state memcapacitor based on combination of a memristor and traditional metal–insulator–metal capacitor. A device with an area of 5um x 5um has been fabricated and tested. The structure has been simulated and analyzed using circuit equivalents with parameters obtained from measurements. The memristor is represented by a sinh-type model. The performance of the memcapacitor is discussed, and some methods to improve it are proposed.