A1 Refereed original research article in a scientific journal
Structure of ordered oxide on InAs(100) surface
Authors: M P J Punkkinen, P Laukkanen, J Lång, M Kuzmin, J Dahl, H L Zhang, M Pessa, M Guina, L Vitos, K Kokko
Publisher: Elsevier
Publication year: 2012
Journal: Surface Science
Journal name in source: SURFACE SCIENCE
Journal acronym: SURF SCI
Number in series: 23-24
Volume: 606
Issue: 23-24
First page : 1837
Last page: 1841
Number of pages: 5
ISSN: 0039-6028
DOI: https://doi.org/10.1016/j.susc.2012.07.028
Abstract
It was recently found that oxygen induces ordered reconstructions on several III-V surfaces. The most oxygen-rich reconstruction shows (3x1) periodicity. Based on first-principles investigations, a detailed atomic model is presented for this reconstruction. The uncommon periodicity is attributed to the highly stable In - O - In trilayer below surface which also leads to stabilizing additional bonds within the surface layer. The strain induced by the trilayer is more effectively accommodated within the (3 x 1) reconstruction than within the competing (2 x 1) reconstruction due to smaller number of dimers. It is proposed that the experimentally found semiconductivity is reached by substitutional atoms within the surface layer. Suitable substitution preserves the magnitude of the bulk band gap. (C) 2012 Elsevier B.V. All rights reserved.
It was recently found that oxygen induces ordered reconstructions on several III-V surfaces. The most oxygen-rich reconstruction shows (3x1) periodicity. Based on first-principles investigations, a detailed atomic model is presented for this reconstruction. The uncommon periodicity is attributed to the highly stable In - O - In trilayer below surface which also leads to stabilizing additional bonds within the surface layer. The strain induced by the trilayer is more effectively accommodated within the (3 x 1) reconstruction than within the competing (2 x 1) reconstruction due to smaller number of dimers. It is proposed that the experimentally found semiconductivity is reached by substitutional atoms within the surface layer. Suitable substitution preserves the magnitude of the bulk band gap. (C) 2012 Elsevier B.V. All rights reserved.
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