A1 Journal article – refereed

Surface doping of GaxIn1−xAs semiconductor crystals with magnesium




List of Authors: Yasir M, Mäkelä J, Koiva D, Tuominen M, Dahl J, Lehtiö J, Kuzmin M, Rad ZJ, Punkkinen M, Laukkanen P, Kokko K, Polojärvi V, Lyytikäinen J, Tukiainen A, Guina M

Publisher: Elsevier

Publication year: 2018

Journal: Materialia

Journal name in source: Materialia

Volume number: 2

ISSN: 2589-1529

DOI: http://dx.doi.org/10.1016/j.mtla.2018.05.008

URL: http://www.sciencedirect.com/science/article/pii/S258915291830019X


Abstract
Effects of magnesium (Mg) alloying of GaxIn1−xAs(100) semiconductor surfaces have been investigated by low-energy electron diffraction, scanning tunneling microscopy/spectroscopy, and responsivity analysis of an infrared-detector component. In particular, the formation of an unusual Mg-induced (2 × 1) structure on GaAs(100) surfaces is found when depositing 1–3 monolayers of Mg on a cleaned GaAs(100) surface followed by annealing the sample in vacuum conditions at up to 500 °C. Concomitantly, the spectroscopy data show that the Fermi-level shifts toward valence band at the surface, indicating p-type doping of a surface part of GaAs due to Mg incorporation into the semiconductor. This surface-doping effect is also present in a test GaxIn1−xAs infrared detector, leading to increase in the detector responsivity. This beneficial effect of Mg-induced p-type doping is explained by a band-bending induced transfer of electrons away from a defect-rich top interface.


Last updated on 2021-24-06 at 11:47