Vertaisarvioitu alkuperäisartikkeli tai data-artikkeli tieteellisessä aikakauslehdessä (A1)

Surface doping of GaxIn1−xAs semiconductor crystals with magnesium




Julkaisun tekijätYasir M, Mäkelä J, Koiva D, Tuominen M, Dahl J, Lehtiö J, Kuzmin M, Rad ZJ, Punkkinen M, Laukkanen P, Kokko K, Polojärvi V, Lyytikäinen J, Tukiainen A, Guina M

KustantajaElsevier

Julkaisuvuosi2018

JournalMaterialia

Tietokannassa oleva lehden nimiMaterialia

Volyymi2

Aloitussivu33

Lopetussivun numero36

ISSN2589-1529

DOIhttp://dx.doi.org/10.1016/j.mtla.2018.05.008

Verkko-osoitehttp://www.sciencedirect.com/science/article/pii/S258915291830019X


Tiivistelmä
Effects of magnesium (Mg) alloying of GaxIn1−xAs(100) semiconductor surfaces have been investigated by low-energy electron diffraction, scanning tunneling microscopy/spectroscopy, and responsivity analysis of an infrared-detector component. In particular, the formation of an unusual Mg-induced (2 × 1) structure on GaAs(100) surfaces is found when depositing 1–3 monolayers of Mg on a cleaned GaAs(100) surface followed by annealing the sample in vacuum conditions at up to 500 °C. Concomitantly, the spectroscopy data show that the Fermi-level shifts toward valence band at the surface, indicating p-type doping of a surface part of GaAs due to Mg incorporation into the semiconductor. This surface-doping effect is also present in a test GaxIn1−xAs infrared detector, leading to increase in the detector responsivity. This beneficial effect of Mg-induced p-type doping is explained by a band-bending induced transfer of electrons away from a defect-rich top interface.


Last updated on 2021-24-06 at 11:47