A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä
Modeling flux pinning in thin undoped and BaZrO3-doped YBCO films
Tekijät: Paturi P, Irjala M, Huhtinen H, Abrahamsen AB
Kustantaja: AMER INST PHYSICS
Julkaisuvuosi: 2009
Lehti:: Journal of Applied Physics
Tietokannassa oleva lehden nimi: JOURNAL OF APPLIED PHYSICS
Lehden akronyymi: J APPL PHYS
Vuosikerta: 105
Numero: 2
Sivujen määrä: 8
ISSN: 0021-8979
DOI: https://doi.org/10.1063/1.3066857
Tiivistelmä
A simple model based on distributions of twin boundaries, dislocations, and BaZrO3 nanorods is presented to describe the J(c) properties of undoped and BaZrO3 (BZO)-doped YBa2Cu3Ox thin films. The model accurately describes the shape of J(c)(B,T) curves of the films, when the pinning site distributions are taken from distributions of twin spacings and BZO nanorods from transmission electron microscope images. Thus, assuming that the model can be used for prediction of the J(c) properties, we conclude that for enhancement of undoped films more crystalline defects are needed and for doped films a dopant that would create slightly larger rods would be optimal.
A simple model based on distributions of twin boundaries, dislocations, and BaZrO3 nanorods is presented to describe the J(c) properties of undoped and BaZrO3 (BZO)-doped YBa2Cu3Ox thin films. The model accurately describes the shape of J(c)(B,T) curves of the films, when the pinning site distributions are taken from distributions of twin spacings and BZO nanorods from transmission electron microscope images. Thus, assuming that the model can be used for prediction of the J(c) properties, we conclude that for enhancement of undoped films more crystalline defects are needed and for doped films a dopant that would create slightly larger rods would be optimal.
Turun yliopiston Tutkimustietojärjestelmän portaali