A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä
Electrical properties of surface and interface layers of the N- and In-polar undoped and Mg-doped InN layers grown by PA MBE
Tekijät: T. A. Komissarova, E. Kampert, J. Law, V. N. Jmerik, P. Paturi, X. Wang, A. Yoshikawa, S. V. Ivanov
Kustantaja: AMER INST PHYSICS
Julkaisuvuosi: 2018
Journal: Applied Physics Letters
Tietokannassa oleva lehden nimi: APPLIED PHYSICS LETTERS
Lehden akronyymi: APPL PHYS LETT
Artikkelin numero: 022104
Vuosikerta: 112
Numero: 2
Sivujen määrä: 4
ISSN: 0003-6951
DOI: https://doi.org/10.1063/1.5009794
Tiivistelmä
Electrical properties of N-polar undoped and Mg-doped InN layers and In-polar undoped InN layers grown by plasma-assisted molecular beam epitaxy (PA MBE) were studied. Transport parameters of the surface and interface layers were determined from the measurements of the Hall coefficient and resistivity as well as the Shubnikov-de Haas oscillations at magnetic fields up to 60 T. Contributions of the 2D surface, 3D near-interface, and 2D interface layers to the total conductivity of the InN films were defined and discussed to be dependent on InN surface polarity, Mg doping, and PA MBE growth conditions. Published by AIP Publishing.
Electrical properties of N-polar undoped and Mg-doped InN layers and In-polar undoped InN layers grown by plasma-assisted molecular beam epitaxy (PA MBE) were studied. Transport parameters of the surface and interface layers were determined from the measurements of the Hall coefficient and resistivity as well as the Shubnikov-de Haas oscillations at magnetic fields up to 60 T. Contributions of the 2D surface, 3D near-interface, and 2D interface layers to the total conductivity of the InN films were defined and discussed to be dependent on InN surface polarity, Mg doping, and PA MBE growth conditions. Published by AIP Publishing.
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