A4 Refereed article in a conference publication
Minimum-Energy Point Design in FDSOI Regular-V-t
Authors: Koskinen L, Hiienkari M, Turnquist M, Flatresse P
Conference name: IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)
Publishing place: New York
Publication year: 2015
Journal name in source: 2015 IEEE SOI-3D-SUBTHRESHOLD MICROELECTRONICS TECHNOLOGY UNIFIED CONFERENCE (S3S)
Number of pages: 2
ISBN: 978-1-5090-0259-7
DOI: https://doi.org/10.1109/S3S.2015.7333516
FDSOI has been shown to achieve extremely high performance at low operating voltages: a use-case extremely well suited for applications such as mobile processing. In IoT and Dark Silicon, use cases with extremely low application active times per standby times can be found. Investigated here are the turnover points where the higher threshold voltage and longer channel length options of FDSOI should be used. It was found that for activity factors below 3.2% to 0.5%, depending on the voltage, the Regular V-T option of FDSOI should be used.
