In this paper we consider using memristors for high-dimensional
computing that requires very large associative memories, but generally
has good tolerance to nonidealities in the implementation medium. To
consider such computing with existing devices, we present measurements
of a tantalum oxide memristor that can be programmed to resistance
values between high resistance state and low resistance state. Based on
the measurements, we estimate the variation in the resistance states,
and describe how a pseudo-analog programming operation can be used for
trimming ON-resistance values. Finally, we discuss how different memory
initialization and programming approaches affect the reliability of an
associative search.