A1 Refereed original research article in a scientific journal
Influence of MBE growth modes and conditions on spontaneous formation of metallic In nanoparticles and electrical properties of InN matrix
Authors: Komissarova TA, Wang P, Paturi P, Wang X, Ivanov SV
Publisher: ELSEVIER SCIENCE BV
Publication year: 2017
Journal: Journal of Crystal Growth
Journal name in source: JOURNAL OF CRYSTAL GROWTH
Journal acronym: J CRYST GROWTH
Volume: 478
First page : 216
Last page: 219
Number of pages: 4
ISSN: 0022-0248
eISSN: 1873-5002
DOI: https://doi.org/10.1016/j.jcrysgro.2017.09.010
Abstract
Influence of the molecular beam epitaxy (MBE) growth conditions on the electrical properties of the InN epilayers in terms of minimization of the effect of spontaneously formed In nanoparticles was studied. A three-step growth sequence was used, including direct MBE growth of an InN nucleation layer, migration enhanced epitaxy (MEE) of an InN buffer layer, and In-rich MBE growth of the main InN layer, utilizing the droplet elimination by radical-beam irradiation (DERI) technique. The three-step growth regime was found to lead to decreasing the relative amount of In nanoparticles to 4.8% and 3.8% in In-rich and near-stoichiometric conditions, respectively, whereas the transport properties are better for the In-rich growth. Further reduction of the metallic indium inclusions in the InN films, while keeping simultaneously satisfactory transport parameters, is hardly possible due to fundamental processes of InN thermal decomposition and formation of the nitrogen vacancy conglomerates in the InN matrix. The In inclusions are shown to dominate the electrical conductivity of the InN films even at their minimum amount. (C) 2017 Elsevier B.V. All rights reserved.
Influence of the molecular beam epitaxy (MBE) growth conditions on the electrical properties of the InN epilayers in terms of minimization of the effect of spontaneously formed In nanoparticles was studied. A three-step growth sequence was used, including direct MBE growth of an InN nucleation layer, migration enhanced epitaxy (MEE) of an InN buffer layer, and In-rich MBE growth of the main InN layer, utilizing the droplet elimination by radical-beam irradiation (DERI) technique. The three-step growth regime was found to lead to decreasing the relative amount of In nanoparticles to 4.8% and 3.8% in In-rich and near-stoichiometric conditions, respectively, whereas the transport properties are better for the In-rich growth. Further reduction of the metallic indium inclusions in the InN films, while keeping simultaneously satisfactory transport parameters, is hardly possible due to fundamental processes of InN thermal decomposition and formation of the nitrogen vacancy conglomerates in the InN matrix. The In inclusions are shown to dominate the electrical conductivity of the InN films even at their minimum amount. (C) 2017 Elsevier B.V. All rights reserved.
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