A4 Vertaisarvioitu artikkeli konferenssijulkaisussa
Optical properties of ferromagnetic ytterbium-doped III-nitride epilayers
Tekijät: Jadwisienczak W, Palai R, Wang J, Tanaka H, Wu J, Rivera A, Huhtinen H, Anders A
Julkaisuvuosi: 2011
Journal: physica status solidi (c)
Tietokannassa oleva lehden nimi: PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8
Lehden akronyymi: PHYS STATUS SOLIDI C
Numero sarjassa: 7-8
Vuosikerta: 8
Numero: 7-8
Aloitussivu: 2185
Lopetussivu: 2187
Sivujen määrä: 3
ISSN: 1862-6351
DOI: https://doi.org/10.1002/pssc.201001076
Tiivistelmä
We have studied the optical and magnetic properties of ytterbium (Yb) implanted GaN epilayers grown on (0001) sapphire by different epitaxial growth methods. Samples were implanted at room temperature with Yb ions and subsequently thermally annealed at 1000 degrees C in N-2 at atmospheric pressure. The characteristic Yb3+ ion photoluminescence (PL) spectra were observed in the spectral range between 970 nm and 1050 nm. Analysis of the PL temperature quenching and PL kinetics suggest that Yb3+ ions are involved in at least two major luminescence centers. The magnetizations versus magnetic field curves show an enhancement of magnetic order for Yb-implanted GaN epilayer containing intrinsic impurities and structural defects. The hysteretic behavior with a weak coercivity is enhanced when the magnetic field is out-of-plane indicating magnetic anisotropy of the Yb-implanted GaN epilayers. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
We have studied the optical and magnetic properties of ytterbium (Yb) implanted GaN epilayers grown on (0001) sapphire by different epitaxial growth methods. Samples were implanted at room temperature with Yb ions and subsequently thermally annealed at 1000 degrees C in N-2 at atmospheric pressure. The characteristic Yb3+ ion photoluminescence (PL) spectra were observed in the spectral range between 970 nm and 1050 nm. Analysis of the PL temperature quenching and PL kinetics suggest that Yb3+ ions are involved in at least two major luminescence centers. The magnetizations versus magnetic field curves show an enhancement of magnetic order for Yb-implanted GaN epilayer containing intrinsic impurities and structural defects. The hysteretic behavior with a weak coercivity is enhanced when the magnetic field is out-of-plane indicating magnetic anisotropy of the Yb-implanted GaN epilayers. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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