Perspectives of Bulk and Nanosized II-VI Compounds for Light-Emission Application - UTU Research Portal

B1 Non-refereed article in a scientific journal

Perspectives of Bulk and Nanosized II-VI Compounds for Light-Emission Application

Authors: Radevici I, Sushkevich K, Colibaba G, Huhtinen H, Nedeoglo D, Paturi P

Publisher: SPRINGER, 233 SPRING STREET, NEW YORK, NY 10013, UNITED STATES

Publication year: 2016

Journal: IFMBE proceedings

Journal name in source: 3RD INTERNATIONAL CONFERENCE ON NANOTECHNOLOGIES AND BIOMEDICAL ENGINEERING

Journal acronym: IFMBE PROC

Volume: 55

First page : 142

Last page: 145

Number of pages: 4

ISBN: 978-981-287-735-2

ISSN: 1680-0737

DOI: https://doi.org/10.1007/978-981-287-736-9_34

Abstract

Activation of II-VI semiconductors with transition metals (Cr) and rare-earths elements (Yb) results in interaction of the doping ions with the native defects (e.g., zinc vacancies). This interaction has the most significant influence on formation of emission properties of the wide bandgap semiconductors. Effects of defect-impurity interaction on emission spectra of bulk ZnSe:Cr and ZnSe:Yb crystals are shown. Possibility to use nanosized materials to control this interaction is discussed.