Optimal BZO Doping in YBCO Films Grown on Single Crystal STO and Buffered NiW Substrates




Huhtinen H, Irjala M, Paturi P, Falter M

PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC

2011

IEEE Transactions on Applied Superconductivity

IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY

IEEE T APPL SUPERCON

3

21

3

2753

2757

5

1051-8223

DOIhttps://doi.org/10.1109/TASC.2010.2100798



The influence of the BaZrO(3) (BZO) dopant concentration on structural and superconducting properties of YBa(2)Cu(3)O(6+x) (YBCO) thin films deposited on single crystal SrTiO(3) (STO) and buffered NiW metal substrates is investigated. Depending on the applied temperature and external magnetic field, the optimal BZO content n(opt) is found to vary so that irrespective of substrate used, in higher magnetic fields also higher n(opt) is needed. Moreover, the n(opt) of 4wt.% in YBCO films grown on STO is increased up to 7.5wt.% in films on NiW, especially in fields above 1 T. This phenomenon is qualitatively explained by the difference in size, shape and the distribution of BZO pinning centers and other structural disorders in the YBCO matrix. The results substantially affect to the development of the optimal flux pinning structure in future applications of high-temperature superconductors.



Last updated on 2024-26-11 at 21:55