A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä

Excitation effects and luminescence stability in porous SiO2:C layers




TekijätVasin A, Rusavsky A, Nazarov A, Lysenko V, Rudko G, Piryatinski Y, Blonsky I, Salonen J, Makila E, Starik S

KustantajaWILEY-V C H VERLAG GMBH

Julkaisuvuosi2012

Journalphysica status solidi (a)

Tietokannassa oleva lehden nimiPHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Lehden akronyymiPHYS STATUS SOLIDI A

Numero sarjassa6

Vuosikerta209

Numero6

Aloitussivu1015

Lopetussivu1021

Sivujen määrä7

ISSN1862-6300

DOIhttps://doi.org/10.1002/pssa.201100815


Tiivistelmä
White-light emitting porous SiO2:C layers on silicon wafers have been fabricated by oxidation of carbonized porous silicon. The study was focused mainly on the identification of the mechanism of light emission and photo-induced degradation. The effect of carbonization temperature and exposure to intense ultraviolet irradiation on the photoluminescence (PL) properties was studied by steady state and time-resolved PL measurements. Two types of photo-induced degradation phenomena were observed: reversible and irreversible. The irreversible degradation is suggested to be associated with photo-induced chemical interaction of light emitting material with atmospheric oxygen. It is demonstrated that irreversible degradation can be reduced by encapsulation of the light-emitting material. The structural configuration of light-emitting centers and mechanism of reversible degradation are discussed.



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