A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä
Attribution of white-light emitting centers with carbonized surface in nano-structured SiO2:C layers
Tekijät: Vasin AV, Muto S, Ishikawa Y, Salonen J, Nazarov AN, Lysenko VS
Kustantaja: ELSEVIER SCIENCE SA
Julkaisuvuosi: 2011
Lehti:: Thin Solid Films
Tietokannassa oleva lehden nimi: THIN SOLID FILMS
Lehden akronyymi: THIN SOLID FILMS
Numero sarjassa: 12
Vuosikerta: 519
Numero: 12
Aloitussivu: 4008
Lopetussivu: 4011
Sivujen määrä: 4
ISSN: 0040-6090
DOI: https://doi.org/10.1016/j.tsf.2011.01.199
Tiivistelmä
Carbon incorporated silicon oxide layers were fabricated by carbonization of porous silicon layer in acetylene atmosphere followed by oxidation in wet argon. The resulting porous SiO2:C material exhibited a strong white photoluminescence. Subsequent thermal treatment in oxygen at 600 degrees C significantly decreased the green-yellow part of photoluminescence band while blue shoulder remained unchanged. Annealing at the same temperature in pure argon did not change light-emission properties indicating that the green-yellow light-emission sites originate from the surface. This study focuses on the interface of silicon oxide matrix and carbon inclusions by high-resolution scanning transmission electron microscopy (STEM) combined with electron energy loss spectroscopy (EELS). It is confirmed by EELS and STEM that the green-yellow emission band is associated with the carbonized interface in the porous layer. (C) 2011 Elsevier B.V. All rights reserved.
Carbon incorporated silicon oxide layers were fabricated by carbonization of porous silicon layer in acetylene atmosphere followed by oxidation in wet argon. The resulting porous SiO2:C material exhibited a strong white photoluminescence. Subsequent thermal treatment in oxygen at 600 degrees C significantly decreased the green-yellow part of photoluminescence band while blue shoulder remained unchanged. Annealing at the same temperature in pure argon did not change light-emission properties indicating that the green-yellow light-emission sites originate from the surface. This study focuses on the interface of silicon oxide matrix and carbon inclusions by high-resolution scanning transmission electron microscopy (STEM) combined with electron energy loss spectroscopy (EELS). It is confirmed by EELS and STEM that the green-yellow emission band is associated with the carbonized interface in the porous layer. (C) 2011 Elsevier B.V. All rights reserved.
Turun yliopiston Tutkimustietojärjestelmän portaali