A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä
Room temperature charge-ordered phase in Gd0.6Ca0.4MnO3 and Sm0.6Ca0.4MnO3 thin films
Tekijät: P. Paturi, J. Tikkanen, H. Huhtinen
Kustantaja: ELSEVIER SCIENCE BV
Julkaisuvuosi: 2017
Journal: Journal of Magnetism and Magnetic Materials
Tietokannassa oleva lehden nimi: JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
Lehden akronyymi: J MAGN MAGN MATER
Vuosikerta: 432
Aloitussivu: 164
Lopetussivu: 168
Sivujen määrä: 5
ISSN: 0304-8853
eISSN: 1873-4766
DOI: https://doi.org/10.1016/j.jmmm.2017.01.080
Tiivistelmä
We have grown rarely studied Gd1-x CaxMnO3 (GCMO) and Sm1-xCaxMnO3 (SCMO) thin films on SrTiO3 (100) single crystal substrates with pulsed laser deposition in order to optimize the magnetic and structural properties for e.g. memristor-like applications. To enable the Mott insulator to metal transition with practicable external stimulus, the previously unstudied x = 0.4 doping was chosen. The deposition temperature was 500 degrees C or 700 degrees C and the oxygen post-annealing was done in situ at 500 degrees C or 700 degrees C. All the films were fully textured and (0b0) oriented, but the ones made at 700 degrees C had better crystalline quality. For the same pulse amounts, GCMO films were clearly thinner than the SCMO films. Magnetically, all the films showed a charge/orbital order phase transition around 360 K and a ferrimagnetic transition around 70 K. The saturation magnetization at 10 K was highest in the films deposited and oxygen annealed at 700 degrees C. The samples deposited and annealed at 500 degrees C contained an unknown ferromagnetic impurity, which was invisible in structural characterization and not observed in the other samples. The samples made at 700 degrees C had a hysteretic I(V)-curves typical for materials used in memristors. (C) 2017 Elsevier B.V. All rights reserved.
We have grown rarely studied Gd1-x CaxMnO3 (GCMO) and Sm1-xCaxMnO3 (SCMO) thin films on SrTiO3 (100) single crystal substrates with pulsed laser deposition in order to optimize the magnetic and structural properties for e.g. memristor-like applications. To enable the Mott insulator to metal transition with practicable external stimulus, the previously unstudied x = 0.4 doping was chosen. The deposition temperature was 500 degrees C or 700 degrees C and the oxygen post-annealing was done in situ at 500 degrees C or 700 degrees C. All the films were fully textured and (0b0) oriented, but the ones made at 700 degrees C had better crystalline quality. For the same pulse amounts, GCMO films were clearly thinner than the SCMO films. Magnetically, all the films showed a charge/orbital order phase transition around 360 K and a ferrimagnetic transition around 70 K. The saturation magnetization at 10 K was highest in the films deposited and oxygen annealed at 700 degrees C. The samples deposited and annealed at 500 degrees C contained an unknown ferromagnetic impurity, which was invisible in structural characterization and not observed in the other samples. The samples made at 700 degrees C had a hysteretic I(V)-curves typical for materials used in memristors. (C) 2017 Elsevier B.V. All rights reserved.
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