A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä
Detection of metallic In nanoparticles in InGaN alloys
Tekijät: Komissarova TA, Jmerik VN, Ivanov SV, Paturi P
Kustantaja: AMER INST PHYSICS
Julkaisuvuosi: 2011
Journal: Applied Physics Letters
Tietokannassa oleva lehden nimi: APPLIED PHYSICS LETTERS
Lehden akronyymi: APPL PHYS LETT
Numero sarjassa: 7
Vuosikerta: 99
Numero: 7
Sivujen määrä: 3
ISSN: 0003-6951
DOI: https://doi.org/10.1063/1.3626039
Tiivistelmä
We report on detection of metallic indium nanoparticles in the InxGa(1-x)N alloys grown by plasma-assisted molecular beam epitaxy at x exceeding 0.38 +/- 0.03, using Hall effect measurements in a wide magnetic field range (up to 30 T). Observation of the abnormally increasing magnetic field dependences of the absolute value of Hall coefficient, approximated in the frames of the model taking into account influence of the highly conductive inclusions, was employed as a reliable criterion of presence of the In nanoparticles in the studied layers. The onset of In inclusions is governed by x rather than growth stoichiometric conditions. (C) 2011 American Institute of Physics. [doi:10.1063/1.3626039]
We report on detection of metallic indium nanoparticles in the InxGa(1-x)N alloys grown by plasma-assisted molecular beam epitaxy at x exceeding 0.38 +/- 0.03, using Hall effect measurements in a wide magnetic field range (up to 30 T). Observation of the abnormally increasing magnetic field dependences of the absolute value of Hall coefficient, approximated in the frames of the model taking into account influence of the highly conductive inclusions, was employed as a reliable criterion of presence of the In nanoparticles in the studied layers. The onset of In inclusions is governed by x rather than growth stoichiometric conditions. (C) 2011 American Institute of Physics. [doi:10.1063/1.3626039]
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