A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä
Large magnetoresistance effect in InN epilayers
Tekijät: Komissarova TA, Shakhov MA, Jmerik VN, Parfeniev RV, Paturi P, Wang X, Yoshikawa A, Ivanov SV
Kustantaja: AMER PHYSICAL SOC
Julkaisuvuosi: 2010
Journal: Physical Review B
Tietokannassa oleva lehden nimi: PHYSICAL REVIEW B
Lehden akronyymi: PHYS REV B
Numero sarjassa: 24
Vuosikerta: 82
Numero: 24
Sivujen määrä: 5
ISSN: 1098-0121
DOI: https://doi.org/10.1103/PhysRevB.82.245204
Tiivistelmä
We report on the large nonsaturated transverse magnetoresistance (TMR) effect in InN films grown by plasma-assisted molecular-beam epitaxy. It is proved that the origin of the TMR effect in InN epilayers is the presence of spontaneously formed In nanoparticles. The effect of the In nanoparticles on the transport properties of the InN films is discussed in detail, accompanied by supporting theoretical calculations. The role of electronic parameters of the InN semiconductor matrix as well as the size and amount of In nanoparticles, which govern the magnitude of the TMR effect, has been determined. The negative TMR effect observed in Mg-doped InN films is also considered within the same metal-semiconductor composite model. It is proposed that high Mg concentration leads to the formation of specific modification of size and arrangement of the In inclusions.
We report on the large nonsaturated transverse magnetoresistance (TMR) effect in InN films grown by plasma-assisted molecular-beam epitaxy. It is proved that the origin of the TMR effect in InN epilayers is the presence of spontaneously formed In nanoparticles. The effect of the In nanoparticles on the transport properties of the InN films is discussed in detail, accompanied by supporting theoretical calculations. The role of electronic parameters of the InN semiconductor matrix as well as the size and amount of In nanoparticles, which govern the magnitude of the TMR effect, has been determined. The negative TMR effect observed in Mg-doped InN films is also considered within the same metal-semiconductor composite model. It is proposed that high Mg concentration leads to the formation of specific modification of size and arrangement of the In inclusions.
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