A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä
Multi-Carrier Generation in Organic-Passivated Black Silicon Solar Cells with Industrially Feasible Processes
Tekijät: Zhou X, Wan L, Li H, Yang XL, Chen JW, Ge KP, Yan J, Zhang CL, Gao Q, Zhang XN, Guo JX, Li F, Wang JM, Song DY, Wang SF, Flavel BS, Chen JH
Kustantaja: WILEY-V C H VERLAG GMBH
Julkaisuvuosi: 2023
Journal: Small
Tietokannassa oleva lehden nimi: SMALL
Lehden akronyymi: SMALL
Artikkelin numero: 2205848
Vuosikerta: 19
Numero: 10
Sivujen määrä: 7
ISSN: 1613-6810
DOI: https://doi.org/10.1002/smll.202205848
Tiivistelmä
The innate inverse Auger effect within bulk silicon can result in multiple carrier generation. Observation of this effect is reliant upon low high-energy photon reflectance and high-quality surface passivation. In the photovoltaics industry, metal-assisted chemical etching (MACE) to afford black silicon (b-Si) can provide a low high-energy photon reflectance. However, an industrially feasible and cheaper technology to conformally passivate the outer-shell defects of these nanowires is currently lacking. Here, a technology is introduced to infiltrate black silicon nanopores with a simple and vacuum-free organic passivation layer that affords millisecond-level minority carrier lifetimes and matches perfectly with existing solution-based processing of the MACE black silicon. Advancements such as the demonstration of an excellent passivation effect whilst also being low reflectance provide a new technological route for inverse Auger multiple carrier generation and an industrially feasible technical scheme for the development of the MACE b-Si solar cells.
The innate inverse Auger effect within bulk silicon can result in multiple carrier generation. Observation of this effect is reliant upon low high-energy photon reflectance and high-quality surface passivation. In the photovoltaics industry, metal-assisted chemical etching (MACE) to afford black silicon (b-Si) can provide a low high-energy photon reflectance. However, an industrially feasible and cheaper technology to conformally passivate the outer-shell defects of these nanowires is currently lacking. Here, a technology is introduced to infiltrate black silicon nanopores with a simple and vacuum-free organic passivation layer that affords millisecond-level minority carrier lifetimes and matches perfectly with existing solution-based processing of the MACE black silicon. Advancements such as the demonstration of an excellent passivation effect whilst also being low reflectance provide a new technological route for inverse Auger multiple carrier generation and an industrially feasible technical scheme for the development of the MACE b-Si solar cells.
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