A1 Vertaisarvioitu alkuperäisartikkeli tieteellisessä lehdessä
Photo-induced insulator-metal transition in Pr0.6Ca0.4MnO3 thin films grown by pulsed laser deposition: Effect of thickness dependent structural and transport properties
Tekijät: Tomi Elovaara, Hannu Huhtinen, Sayani Majumdar, Petriina Paturi
Kustantaja: ELSEVIER SCIENCE BV
Julkaisuvuosi: 2016
Journal: Applied Surface Science
Tietokannassa oleva lehden nimi: APPLIED SURFACE SCIENCE
Lehden akronyymi: APPL SURF SCI
Vuosikerta: 381
Aloitussivu: 17
Lopetussivu: 21
Sivujen määrä: 5
ISSN: 0169-4332
DOI: https://doi.org/10.1016/j.apsusc.2016.02.134
Tiivistelmä
We report photo-induced colossal magnetoresistive insulator-metal transition (IMT) in Pr0.6Ca0.4MnO3 thin films under much reduced applied magnetic field. The colossal effect was studied as a function of film thickness and thus with variable structural properties. Thorough structural, magnetic and magnetotransport characterization under light shows that the highest effect on the transition field can be obtained in the thinnest film (38 nm). However, due to the substrate induced strain of this film the required magnetic field for IMT is quite high. The best crystalline properties of the 110 nm film lead to the lowest IMT field under light and 10(9)% change in resistance at 10 K. With increasing thickness, the film properties start to move more toward the bulk material and, hence, IMT is no more observed under the applied field of 9 T. Our results indicate that for obtaining large photo-induced CMR, the best epitaxial quality of thin films is essential. (C) 2016 Elsevier B.V. All rights reserved.
We report photo-induced colossal magnetoresistive insulator-metal transition (IMT) in Pr0.6Ca0.4MnO3 thin films under much reduced applied magnetic field. The colossal effect was studied as a function of film thickness and thus with variable structural properties. Thorough structural, magnetic and magnetotransport characterization under light shows that the highest effect on the transition field can be obtained in the thinnest film (38 nm). However, due to the substrate induced strain of this film the required magnetic field for IMT is quite high. The best crystalline properties of the 110 nm film lead to the lowest IMT field under light and 10(9)% change in resistance at 10 K. With increasing thickness, the film properties start to move more toward the bulk material and, hence, IMT is no more observed under the applied field of 9 T. Our results indicate that for obtaining large photo-induced CMR, the best epitaxial quality of thin films is essential. (C) 2016 Elsevier B.V. All rights reserved.
Turun yliopiston Tutkimustietojärjestelmän portaali