A1 Journal article – refereed
Hierarchical porous silicon and porous silicon nanowires produced with regenerative electroless Etching (reetching) and metal assisted catalytic etching (MACE)




List of Authors: Kurt W Kolasinski, Bret A. Unger, Haibo Yu, Alexis T. Ernst, Mark Aindow, Ermei Mäkilä, Jarno Salonen
Publisher: Electrochemical Society Inc.
Publication year: 2018
Journal: ECS Transactions
Journal name in source: ECS Transactions
Volume number: 86
ISBN: 9781607685395
eISSN: 1938-6737

Abstract

ReEtching produces nanostructured silicon when a catalytic agent, e.g. dissolved V2O5, is used to facilitate etching between Si and H2O2. H2O2
regenerates dissolved V in a 5+ oxidation state, which initiates
etching by injecting holes into the Si valence band. Independent
control over the extent of reaction (controlled by
the amount of H2O2 added) and the rate of reaction (controlled by the rate at which H2O2
is pumped into the etchant solution) allows us to porosify Si
substrates of arbitrary size, shape and doping, including wafers,
single-crystal powders, polycrystalline powders,
metallurgical grade powder, Si nanowires, Si pillars and Si powders that
have been textured with metal-assisted catalytic
etching (MACE). Similarly, improved control over the nucleation and
etching
in MACE is achieved by pumped delivery of reagents.
Nanowires are not produced directly by MACE of powders, rather they
form
when a porosified layers is cleaved by capillary
forces or sonication.


Last updated on 2019-21-08 at 22:26