A1 Journal article – refereed
Analytical development and optimization of a graphene-solution interface capacitance model




List of Authors: Hediyeh Karimi, Rasoul Rahmani, Reza Mashayekhi, Leyla Ranjbari, Amir H. Shirdel, Niloofar Haghighian, Parisa Movahedi, Moein Hadiyan, Razali Ismail
Publisher: BEILSTEIN-INSTITUT
Place: FRANKFURT AM MAIN; TRAKEHNER STRASSE 7-9, FRANKFURT AM MAIN, 60487, GERMANY
Publication year: 2014
Journal: Beilstein Journal of Nanotechnology
Journal name in source: Beilstein Journal of Nanotechnology
Journal acronym: Beilstein J.Nanotechnol.
Volume number: 5
Number of pages: 7
ISSN: 2190-4286

Abstract


Graphene, which as a new carbon material shows great potential for a range of applications because of its exceptional electronic and mechanical properties, becomes a matter of attention in these years. The use of graphene in nanoscale devices plays an important role in achieving more accurate and faster devices. Although there are lots of experimental studies in this area, there is a lack of analytical models. Quantum capacitance as one of the important properties of field effect transistors (FETs) is in our focus. The quantum capacitance of electrolyte-gated transistors (EGFETs) along with a relevant equivalent circuit is suggested in terms of Fermi velocity, carrier density, and fundamental physical quantities. The analytical model is compared with the experimental data and the mean absolute percentage error (MAPE) is calculated to be 11.82. In order to decrease the error, a new function of E composed of alpha and beta parameters is suggested. In another attempt, the ant colony optimization (ACO) algorithm is implemented for optimization and development of an analytical model to obtain a more accurate capacitance model. To further confirm this viewpoint, based on the given results, the accuracy of the optimized model is more than 97% which is in an acceptable range of accuracy.



Last updated on 2019-29-01 at 18:14