A1 Journal article – refereed
Effects of thinning and heating for TiO2/AlInP junctions




List of Authors: J. Mäkelä, M. Tuominen, M. Yasir, V. Polojärvi, A. Aho, A. Tukiainen, M. Kuzmin, M.P.J. Punkkinen, P. Laukkanen, K. Kokko, M. Guina
Publisher: Elsevier
Publication year: 2015
Journal: Journal of Electron Spectroscopy and Related Phenomena
Volume number: 205
Number of pages: 4

Abstract


TiO2/AlInP junctions are used to construct the antireflection coatings for solar cells and to passivate III–V nanostructure surfaces. The thickness of AlInP epilayer affects light absorption and appropriate Al composition determining further the energy barrier for carriers. We report on reducing the AlInP thickness by dry etching down to 10 nm without introducing harmful defect states at TiO2/AlInP interface and AlInP/GaInP interface below, according to photoluminescence. Synchrotron-radiation photoelectron spectroscopy reveals that increased oxidation of phosphorus is not harmful to TiO2/AlInP and that post heating of the material enhances AlInP oxidation and group III element segregation resulting in decreased material homogeneity.



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Last updated on 2019-21-08 at 21:14