A1 Journal article – refereed
Oxidation of GaSb(100) and its control studied by scanning tunneling microscopy and spectroscopy




List of Authors: J. Mäkelä, M. Tuominen, M. Yasir, M. Kuzmin, J. Dahl, M. P. J. Punkkinen, P. Laukkanen, K. Kokko, R. M. Wallace
Publisher: AIP Publishing
Publication year: 2015
Journal: Applied Physics Letters
Journal acronym: APL
Volume number: 107
Issue number: 6
eISSN: 1077-3118

Abstract


Atomic-scale knowledge and control of oxidation of GaSb(100), which is a potential interface for energy-efficient transistors, are still incomplete, largely due to an amorphous structure of GaSb(100) oxides. We elucidate these issues with scanning-tunneling microscopy and spectroscopy. The unveiled oxidation-induced building blocks cause defect states above Fermi level around the conduction-band edge. By interconnecting the results to previous photoemission findings, we suggest that the oxidation starts with substituting second-layer Sb sites by oxygen. Adding small amount of indium on GaSb(100), resulting in a (4 × 2)-In reconstruction, before oxidation produces a previously unreported, crystalline oxidized layer of (1 × 3)-O free of gap states.



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Downloadable publication

This is an electronic reprint of the original article.
This reprint may differ from the original in pagination and typographic detail. Please cite the original version.




Downloadable publication

This is an electronic reprint of the original article.
This reprint may differ from the original in pagination and typographic detail. Please cite the original version.




Downloadable publication

This is an electronic reprint of the original article.
This reprint may differ from the original in pagination and typographic detail. Please cite the original version.




Downloadable publication

This is an electronic reprint of the original article.
This reprint may differ from the original in pagination and typographic detail. Please cite the original version.




Last updated on 2019-20-07 at 04:45