A1 Journal article – refereed
Observation of unusual metal-semiconductor interaction and metal-induced gap states at an oxide-semiconductor interface: The case of epitaxial BaO/Ge(100) junction

List of Authors: M. Kuzmin, P. Laukkanen, M. Yasir, J. Mäkelä, M. Tuominen, J. Dahl, M. P. J. Punkkinen, K. Kokko, H.-P. Hedman, J. Moon, R. Punkkinen, V. Polojärvi, V.-M. Korpijärvi, M. Guina
Publication year: 2015
Journal: Physical Review B
Journal name in source: PHYSICAL REVIEW B
Journal acronym: PHYS REV B
Volume number: 92
ISSN: 1098-0121


Oxidation of semiconductor surfaces is known to cause defect states at oxide-semiconductor interfaces of various devices. In contrast, effects of the semiconductor interaction with non-oxygen elements at such junctions are still unclear. We present evidence for the interrelationship between a metal (non-oxygen)semiconductor reaction and formation of the band-gap defect states at a buried oxide-semiconductor interface by investigating well-defined epitaxial BaO/Ge (100) junctions with high-resolution synchrotron-radiation photoelectron spectroscopy. The states that arise from the Ba-Ge interaction lead to Fermi-level pinning at 0.40 eV above the valence band maximum, while the defect-free BaO/Ge (100) interface has a flat band structure.

Last updated on 2019-29-01 at 15:24